Khan Wins NSF CAREER Award

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Asif Khan

Asif Khan has been named as a recipient of the NSF CAREER Award. He is an assistant professor in the Georgia Tech School of Electrical and Computer Engineering (ECE) and also holds a courtesy appointment in the School of Materials Science and Engineering.

The title of Khan’s award is “Antiferroelectric Negative Capacitance Transistors for Ultra-low Power Computing,” and it will start on March 15, 2021 and end on February 28, 2026. 

Today's society is experiencing an unprecedented growth of its digital footprint – be it in the form of uploading a photo on Facebook, live-streaming a teaching module to a massive global audience on YouTube, or commandeering a revolution via Twitter. This convenience of modern computing, however, comes with a steep cost in terms of energy use and environmental impact. Today, the global information infrastructure, such as data centers, emit as much greenhouse gases as that of the state of Nevada or a country, such as The Netherlands or Malaysia, and constitute around 1 percent of world-wide electricity demand. According to scientific estimates, this fraction may increase to a double digit percentage in the next 15-20 years. 

At the core of this predicament lies the fact that the fundamental building blocks of digital hardware – the transistors – have long been overdue for a prime upgrade in terms of their energy efficiencies. The proposed research aims to explore an energy-efficient transistor concept – known as a negative capacitance field-effect transistor, using a new class of materials called antiferroelectric oxides. 

Khan joined the ECE faculty in 2017. His research is on advanced semiconductor devices—devices that will shape the future of computing in the post-scaling era. His research group currently focuses on ferroelectric devices, in all aspects ranging from materials physics, growth, and electron microscopy to device fabrication, all the way to ferroelectric circuits and systems for artificial intelligence/machine learning/data-centric applications. Khan’s Ph.D. work led to the proof-of-concept demonstration of the negative capacitance phenomenon in ferroelectric materials, which can reduce the power dissipation in electronic devices below the ‘fundamental’ thermodynamic limit. This culminated in the initial development of the field of negative capacitance.

Khan has published 2 book chapters and 70 journal and peer-reviewed conference publications, and he has given 20 invited talks and tutorials at premier microelectronics and ferroelectric conferences. Khan currently has one patent pending at Intel. 

Khan’s awards include the NSF CAREER award (2021), Intel Rising Star Award (2020), Qualcomm Innovation Fellowship (2012), TSMC Outstanding Student Research Award (2011), and the University Gold Medal from Bangladesh University of Engineering and Technology (2011). His group at Georgia Tech consists of six Ph.D. students and three research engineers, many of whom won Institute-level and international awards, including an IEEE Electron Devices Society (EDS) Masters Student Fellowship (2020). Khan’s research is supported by the National Science Foundation, the Defense Advanced Research Projects Agency, the Semiconductor Research Corporation, and Intel Corporation. 

Khan has also developed a graduate course, ECE 8863A Quantum Computing Devices and Hardware, as a part of the campus wide response to the national prioritization of quantum computing, known as the National Quantum Initiative Act (NQIA) that was signed by the U.S. president in 2018. Khan recently received the Class of 1934 CIOS Honor Roll award for excellence in teaching this course in Fall 2020. 

Location

Atlanta, GA

Email

jackie.nemeth@ece.gatech.edu

Contact

Jackie Nemeth

School of Electrical and Computer Engineering

404-894-2906

Khan Recognized with 2020 Intel Rising Star Award

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Asif Khan has been named as one of the 10 awardees of the 2020 Intel Rising Star Award. Khan is an assistant professor at the Georgia Tech School of Electrical and Computer Engineering (ECE).

The purpose of the program is to help promote the careers of early career faculty members who show great promise as future academic leaders in disruptive computing technologies and to foster long term collaborative relationships with Intel. The awards were given based on progressive research in computer science, engineering, and social science in support of the global digital transition in the following areas: software, security, interconnect, memory, architecture, and process.

Khan joined the ECE faculty in 2017, with a courtesy appointment with the School of Materials Science and Engineering. He received his Ph.D. in electrical engineering and computer sciences from the University of California, Berkeley in 2015.

Khan’s research is on advanced semiconductor devices—devices that will shape the future of computing in the post-scaling era. His group is currently focusing on ferroelectric devices on all aspects ranging from materials physics, growth and electron microscopy to device fabrication, all the way to ferroelectric circuits and systems for artificial intelligence/machine learning/variable load applications. 

His research group consists of five graduate students and two research staff members. They publish in venues such as the International Electron Devices Meeting, the Symposium on VLSI Technology and CircuitsIEEE Electron Device Letters, IEEE Transactions on Electron Devices, Nature Electronics, Nature Materials, Nano Letters, and Nature.

Khan’s program is supported by the National Science Foundation, the Semiconductor Research Corporation, and the Defense Advanced Research Program Agency. His Ph.D. research led to the first experimental demonstration of the negative capacitance effect in ferroelectrics, which can reduce the energy dissipation in CMOS technology below the fundamental thermodynamic (Boltzmann) limit. One of his publications was cited as one of the nine significant papers in the history of ferroelectricity in a 2020 editorial article in Nature Materials, celebrating the 100th year since the discovery of ferroelectricity in 1920.

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